The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Jun. 10, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Giyoung Jo, Suwon-si, KR;

Hyeoncheol Park, Hwaseong-si, KR;

Daejin Yang, Seoul, KR;

Dohwon Jung, Seoul, KR;

Taewon Jeong, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); C04B 35/468 (2006.01); H01B 3/12 (2006.01); H01G 4/12 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10D 1/682 (2025.01); H01B 3/12 (2013.01); H01G 4/1227 (2013.01); H10B 12/31 (2023.02); C04B 35/4682 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3255 (2013.01); C04B 2235/762 (2013.01);
Abstract

The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1: <Formula 1> (100-x-y)BaTiO.xBiREO.yABO. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0<x<50, 0<y<50, and 0<x+y<50 are satisfied.


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