Semiconductor device including dummy stacked structure and electronic system including the same

Abstract

A semiconductor device may include a peripheral circuit structure including cell region and an outside region, a cell structure on the cell region, an outside structure on the outside region, and an insulating layer. The outside structure may include a dummy stacked structure, a through electrode penetrating the dummy stacked structure and connected to the peripheral circuit structure, and a dummy vertical structure adjacent to the through electrode and penetrating at least a portion of the dummy stacked structure. The insulating layer may be between the dummy stacked structure and the peripheral circuit structure. The dummy stacked structure may include an upper dummy stacked structure on a lower dummy stacked structure. The upper dummy stacked structure may include upper dummy patterns stacked on the lower dummy stacked structure. The lower dummy stacked structure may include lower dummy patterns stacked on the outside region.