The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01); H10B 43/50 (2023.01); H10W 42/00 (2026.01);

U.S. Cl.

CPC ...

H10B 43/27 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02); H10W 42/121 (2026.01);

Abstract

A semiconductor device includes a gate electrode structure including gate electrodes spaced apart in a first direction perpendicular to an upper surface of a substrate, each gate electrode extending in a second direction parallel to the upper surface of the substrate, a memory channel structure, and a support pattern array including support patterns spaced apart in the second direction and a third direction crossing the second direction, wherein each support pattern has a shape including three vertices and three sides, and wherein a first vertex of a first support pattern closest to a second support pattern and a first vertex of the second support pattern closest to the first support pattern are not aligned in the third direction but have different positions in the second direction.

Find Patent Forward Citations

Kim, Youngwoo. (2026). Vertical memory devices (U.S. Patent No. 12757401). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757401

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile