Semiconductor memory device and method of manufacturing the semiconductor memory device

Abstract

Provided herein may be a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device may include a sub-block insulating layer interposed between a first select gate structure and a second select gate structure, a plurality of conductive patterns stacked over first and second select gate structures to be spaced apart from each other, and a channel structure penetrating one of the first and second select gate structures and the plurality of conductive patterns, the channel structure including an inflection point located at a level between the sub-block insulating layer and the plurality of conductive patterns.