The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Jul. 03, 2023
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventor:

Hsih-Yang Chiu, Taoyuan City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 20/25 (2023.01); H10W 20/49 (2026.01);
U.S. Cl.
CPC ...
H10B 20/25 (2023.02); H10W 20/493 (2026.01);
Abstract

A semiconductor device structure and a method of manufacturing the same are provided. The semiconductor device structure includes a substrate, a fuse structure, and a first word line. The fuse structure includes a fuse electrode disposed within the substrate. The first word line is electrically coupled to the fuse structure. The first word line is disposed within the substrate and spaced apart from the fuse electrode of the fuse structure. The fuse electrode has a lateral surface protruding toward the first word line.


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Chiu, Hsih-Yang. (2026). Semiconductor device structure including fuse structure embedded in substrate (U.S. Patent No. 12757389). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757389

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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