The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Dec. 17, 2024
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Satoshi Nakayama, Sagamihara, JP;

Shunsuke Suzuki, Tokyo, JP;

Seungju Seo, Tokyo, JP;

Yoshikazu Nitta, Tokyo, JP;

Assignee:

OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H04N 25/59 (2023.01); H04N 25/621 (2023.01); H04N 25/771 (2023.01);
U.S. Cl.
CPC ...
H04N 25/771 (2023.01); H04N 25/59 (2023.01); H04N 25/621 (2023.01);
Abstract

An image sensor and an operation method of a pixel circuit thereof are provided. In the pixel circuit, a transfer transistor is coupled between a photosensitive element and a floating diffusion portion. The pixel circuit selectively operates in one of a low illumination sensing mode and a high illumination sensing mode. When the pixel circuit operates in the low illumination sensing mode, a control voltage with a first level is applied to a control terminal of the transfer transistor during an integration period, and therefore the transfer transistor is turned off. When the pixel circuit operates in the high illumination sensing mode, the control terminal of the transfer transistor is applied with the control voltage with a second level higher than the first level during the integration period, and therefore the transfer transistor is turned off.


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