The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Jun. 30, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Ko Kanaya, Tokyo, JP;

Kazuya Yamamoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/191 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H10W 44/20 (2026.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 1/56 (2013.01); H03F 3/195 (2013.01); H10W 44/20 (2026.01); H03F 2200/451 (2013.01); H10W 44/206 (2026.01); H10W 44/234 (2026.01);
Abstract

A power amplifier according to the present disclosure includes an input terminal that receives a high-frequency signal from an outside, an MMIC that receives the high-frequency signal via the input terminal and amplifies the high-frequency signal, an input matching circuit, a transistor that receives, via the input matching circuit, the high-frequency signal amplified by the MMIC and amplifies the high-frequency signal, an output matching circuit, an output terminal that receives a drain voltage of the transistor from the outside, receives, via the output matching circuit, the high-frequency signal amplified by the transistor, and outputs the high-frequency signal to the outside and a drain bias circuit board that connects a drain of the transistor and a drain of the MMIC, wherein the transistor and the MMIC are conjugately matched at impedance smaller than 50 Ω.


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