The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Mar. 09, 2022
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yuki Itoh, Tokyo, JP;

Yasushige Mukunoki, Tokyo, JP;

Chihiro Kawahara, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/487 (2007.01); B64D 47/00 (2006.01); H02M 1/32 (2007.01);
U.S. Cl.
CPC ...
H02M 1/325 (2021.05); B64D 47/00 (2013.01); H02M 7/487 (2013.01); B64D 2221/00 (2013.01);
Abstract

First and second semiconductor elements are connected in series between a DC positive bus and a DC neutral point bus. Third and fourth semiconductor elements are connected in series between the DC neutral point bus and a DC negative bus. Fifth and sixth semiconductor elements are connected in series between a connection point of the first and second semiconductor elements and a connection point of the third and fourth semiconductor elements. Each semiconductor element includes at least one semiconductor switching element and at least one diode. A breakdown resistance of the first and fourth semiconductor elements to cosmic rays is higher than a breakdown resistance of the second and third semiconductor elements to cosmic rays. A breakdown resistance of the fifth and sixth semiconductor elements is higher than the breakdown resistance of the first and fourth semiconductor elements.


Find Patent Forward Citations

Loading…