The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Dec. 12, 2023
Applicant:
Navitas Semiconductor Limited, Dublin, IE;
Inventors:
Daniel M. Kinzer, El Segundo, CA (US);
Santosh Sharma, Austin, TX (US);
Ju Jason Zhang, Monterey Park, CA (US);
Assignee:
Navitas Semiconductor Limited, Dublin, IE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); H02J 7/00 (2006.01); H02M 1/088 (2006.01); H02M 3/157 (2006.01); H03K 3/00 (2006.01); H03K 3/012 (2006.01); H03K 3/356 (2006.01); H03K 17/10 (2006.01); H03K 19/0185 (2006.01); H10D 62/17 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01); H10D 64/23 (2025.01); H10D 84/83 (2025.01); H10D 84/84 (2025.01); H10D 89/60 (2025.01); H10W 20/43 (2026.01); H10W 42/80 (2026.01); H10W 70/40 (2026.01); H10W 90/00 (2026.01); H02M 1/00 (2006.01); H02M 3/155 (2006.01);
U.S. Cl.
CPC ...
H02J 7/00 (2013.01); H02M 1/088 (2013.01); H02M 3/157 (2013.01); H02M 3/1584 (2013.01); H02M 3/1588 (2013.01); H03K 3/012 (2013.01); H03K 3/356017 (2013.01); H03K 17/102 (2013.01); H03K 19/018507 (2013.01); H10D 62/235 (2025.01); H10D 62/8503 (2025.01); H10D 64/111 (2025.01); H10D 64/257 (2025.01); H10D 84/83 (2025.01); H10D 84/84 (2025.01); H10D 89/60 (2025.01); H10W 20/43 (2026.01); H10W 42/80 (2026.01); H10W 70/411 (2026.01); H10W 70/481 (2026.01); H10W 90/00 (2026.01); H10W 90/811 (2026.01); H02M 1/0048 (2021.05); H02M 3/155 (2013.01); Y02B 40/00 (2013.01); Y02B 70/10 (2013.01);
Abstract
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.