The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Jul. 19, 2023
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Xuan Tian, Shanghai, CN;

Liang Li, Beijing, CN;

Vincent Yin, Shanghai, CN;

Daniel J. Linnen, Naperville, IL (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/3459 (2013.01); G11C 29/52 (2013.01);
Abstract

A flash memory includes an improved error handling algorithm for data recovery. Rather than running a default read recovery only, an Enhance Read Retry (ERR) process also is performed. After running a default read recovery, WLs are flagged with an error flag if the read was unsuccessful. The flag triggers ERR mode. ERR mode implements increase of the row read bias or implements increase of row read time or implements multiple pulses at the same voltage, or a combination of all three.


Find Patent Forward Citations

Tian, Xuan. (2026). Enhanced read retry (err) for data recovery in flash memory (U.S. Patent No. 12755797). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12755797

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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