Method and apparatus for initializing resistive random access memory and electronic device

Abstract

A method and apparatus for initializing an RRAM and an electronic device are provided. The method includes: inputting a plurality of pulses of a first voltage into an RRAM until memory cells in the RRAM transition from a high resistance state to a low resistance state; inputting a plurality of pulses of a second voltage, a third voltage . . . and an Nvoltage into the RRAM, so that resistance values of the memory cells reach a corresponding preset value, respectively. Voltage values of the first voltage to the Nvoltage gradually decrease. When a total number of input pulses of an ivoltage is greater than a second preset threshold and a resistance change rate is less than a rate threshold, a plurality of pulses of an increased ivoltage are input into the RRAM until the resistance values of the memory cells reach an ipreset value.