Memory devices for implementing read operation of bidirectional selector only memory (som) cells

Abstract

A memory device performs a read operation of bidirectional switching memory cells. The memory device includes a plurality of memory cells, each of the plurality of memory cells including a material film, an access circuit, and a sense circuit. A logic state of the material film is programmed based on whether the material film is in a crystalline state or an amorphous state. The access circuit applies a first voltage to a first electrode of a selected memory cell from among the plurality of memory cells and applies a second voltage to a second electrode of the selected memory cell, and the sense circuit determines a logic state of the selected memory cell based on electrical reactions of a first sensing node and a second sensing node connected to the selected memory cell with regard to the first voltage and the second voltage.