The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Apr. 12, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Haewook Jeong, Suwon-si, KR;

Changyoung Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 7/08 (2006.01); G11C 7/12 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 7/062 (2013.01); G11C 7/065 (2013.01); G11C 7/08 (2013.01); G11C 7/12 (2013.01); G11C 11/4091 (2013.01);
Abstract

A sense amplifier connected to a bit line and a complementary bit line, the sense amplifier including a first transistor connected between the bit line and a first node and including a first gate terminal connected to a third node, a second transistor connected between the first node and the complementary bit line and including a second gate terminal connected to a fourth node, third transistor connected between the bit line and a second node and including a third gate terminal connected to the third node, and a fourth transistor connected between the complementary bit line and the second node and including a fourth gate terminal connected to the fourth node, wherein first and second RC values viewed from the sense amplifier toward the bit line and the complementary bit line differ, and wherein the second transistor is configured to receive a program voltage during a first time period.


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