The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Mar. 14, 2023
Applicant:

Semes Co., Ltd., Cheonan-si, KR;

Inventors:

Hyun Yoon, Seoul, KR;

Ki Hoon Choi, Cheonan-si, KR;

Seung Un Oh, Cheonan-si, KR;

Young Ho Park, Incheon, KR;

Sang Hyeon Ryu, Yangpyeong-gun, KR;

Tae Hee Kim, Yongin-si, KR;

Sang Gun Lee, Seoul, KR;

Assignee:

Semes Co., Ltd., Chungcheongnam-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/80 (2012.01); B08B 3/12 (2006.01); B08B 13/00 (2006.01); G03F 1/82 (2012.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/40 (2006.01); H10P 50/64 (2026.01); H10P 70/00 (2026.01); H10P 72/00 (2026.01); H10P 72/30 (2026.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
G03F 1/80 (2013.01); B08B 3/12 (2013.01); B08B 13/00 (2013.01); G03F 1/82 (2013.01); G03F 7/168 (2013.01); G03F 7/202 (2013.01); G03F 7/30 (2013.01); G03F 7/3014 (2013.01); G03F 7/3021 (2013.01); G03F 7/3057 (2013.01); G03F 7/3064 (2013.01); G03F 7/40 (2013.01); G03F 7/70733 (2013.01); G03F 7/70775 (2013.01); H10P 50/642 (2026.01); H10P 50/644 (2026.01); H10P 70/00 (2026.01); H10P 72/0402 (2026.01); H10P 72/0404 (2026.01); H10P 72/0408 (2026.01); H10P 72/0411 (2026.01); H10P 72/0422 (2026.01); H10P 72/32 (2026.01); H10P 76/2041 (2026.01);
Abstract

The inventive concept provides a substrate treating method. The substrate treating method includes pre-treating a substrate by cleaning the substrate; etching the substrate by supplying an etchant and heating a substrate supplied with the etchant; and post-treating the substrate after the etching the substrate, and wherein the pre-treating the substrate, the etching the substrate, and the post-treating the substrate are each performed in different chambers, a substrate on which the pre-treating the substrate is completed is transferred in a dry state to a chamber at which the etching the substrate is performed, and a substrate on which the etching the substrate is completed is transferred in a wetted state with a liquid to a chamber at which the post-treating the substrate is performed.


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