Silicon-on-insulator photonic integrated circuits with integrated silicon photonic component and silicon/nitrogen photonic component

Abstract

A photonic integrated circuit may comprise a silicon substrate, a buried oxide (BOX) layer disposed on the silicon substrate, a silicon device layer disposed on the BOX layer, a first silicon waveguide in the silicon device layer, and a silicon/nitrogen waveguide optical amplifier disposed on the BOX layer. The first silicon waveguide comprises a first silicon waveguide core formed in the silicon device layer. The silicon/nitrogen waveguide optical amplifier comprises a first silicon/nitrogen waveguide core portion disposed on the BOX layer and optically coupled with the first silicon waveguide core. The first silicon/nitrogen waveguide core portion comprises a compound of silicon and nitrogen.