The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jul. 19, 2024
Denso Corporation, Kariya-city, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
Daisuke Uematsu, Nisshin, JP;
DENSO CORPORATION, Kariya-city, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
Abstract
A silicon carbide single crystal manufacturing apparatus includes a pressure sensor and a computing device. The pressure sensor is configured to measure a gas pressure of a supply gas containing a silicon carbide raw material gas and introduced into a crucible through a gas introducing pipe. The computing device is configured to perform a prediction of a clogging time, which is a time until the gas introduction pipe is clogged with a solid deposit, based on the gas pressure measured by the pressure sensor a learning model created by machine learning using data calculated from results of simulations of growing the silicon carbide single crystal and results of experiments of growing the silicon carbide single crystal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile