The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Jun. 26, 2024
Applicant:

Visera Technologies Company Ltd., Hsin-Chu City, TW;

Inventors:

Wen-Yu Shih, Hsin-Chu City, TW;

Chin-Ching Chang, Hsin-Chu City, TW;

Yi-Hua Chiu, Hsin-Chu City, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 74/10 (2026.01); H10F 77/30 (2025.01); H10F 77/40 (2025.01); H10W 74/47 (2026.01);
U.S. Cl.
CPC ...
H10W 74/121 (2026.01); H10F 77/331 (2025.01); H10F 77/413 (2025.01); H10W 74/114 (2026.01); H10W 74/127 (2026.01); H10W 74/47 (2026.01);
Abstract

An microelectronic device includes a semiconductor substrate, at least one sensing element disposed in the semiconductor substrate, at least one multi-film stack disposed on the semiconductor substrate and covering the sensing element, a refill layer disposed on the semiconductor substrate and encircling the multi-film stack, and a spacer layer disposed on the multi-film stack and the refill layer. An area of a top surface of the multi-film stack is less than an area of a bottom surface of the multi-film stack. The multi-film stack has a first dimension measured in a direction, a section of the refill layer has a second dimension measured in the direction, and a ratio of the second dimension to the first dimension is in a range from 0.03 to 0.06. The refill layer and the spacer layer are organic layers.


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