The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Sep. 21, 2023
Rohm Co., Ltd., Kyoto, JP;
Keita Shikata, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor device is a nitride semiconductor device including a substrate that has a first main surface and a second main surface at an opposite side thereto and a nitride epitaxial layer that is formed on the first main surface. The nitride semiconductor device has, in plan view, an active region inside the nitride epitaxial layer in which a two-dimensional electron gas can form and an inactive region inside the nitride epitaxial layer in which the two-dimensional electron gas is not formed and includes trenches that, in at least the inactive region among the active region and the inactive region, are formed in the substrate and are dug in from the second main surface toward the first main surface and embedded metals that are formed inside the trenches.