The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Sep. 13, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Donghoon Kwon, Suwon-si, KR;

Kihoon Jang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10D 84/80 (2025.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10D 84/813 (2025.01); H10W 20/42 (2026.01);
Abstract

A semiconductor device includes a first semiconductor structure including circuit elements on a first substrate, a lower interconnection structure connected to the circuit elements, and a peripheral region insulating layer covering the circuit elements; and a second semiconductor structure including a second substrate on the first substrate, a first stack structure including first and second gate electrodes spaced apart from each other and stacked on the second substrate, interlayer insulating layers alternately stacked with the first and second gate electrodes, first and second contact plugs passing through the first and second gate electrodes, and contact plug insulating layers alternately disposed with the interlayer insulating layers and surrounding the contact plugs. The second semiconductor structure includes a first capacitor structure including the first gate electrode, a contact plug insulating layer(s), and the second contact plug, or the second gate electrode, a contact plug insulating layer(s), and the first contact plug.


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