The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Apr. 14, 2023
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventor:

Huilong Zhu, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10W 20/00 (2026.01); H10W 20/42 (2026.01); H10W 20/43 (2026.01); H10W 20/44 (2026.01); H10W 20/46 (2026.01); H10W 20/48 (2026.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H10W 20/43 (2026.01); H10W 20/038 (2026.01); H10W 20/063 (2026.01); H10W 20/071 (2026.01); H10W 20/072 (2026.01); H10W 20/42 (2026.01); H10W 20/46 (2026.01); H10W 20/4403 (2026.01); H10W 20/4432 (2026.01); H10W 20/4441 (2026.01); H10W 20/48 (2026.01);
Abstract

The metallization stack includes a via hole layer including a via hole and an upper interconnection line layer including an upper interconnection line on a substrate. The via hole layer is closer to the substrate than the upper interconnection line layer, a part of the upper interconnection line extends in a first direction, and a sidewall of the part of the upper interconnection line in the first direction is substantially coplanar with an upper portion of a corresponding sidewall of the via hole. The metallization stack further includes: a lower interconnection line layer closer to the substrate than the via hole layer, a part of a lower interconnection line in the lower interconnection line layer extends along a second direction, and a sidewall of the part of the lower interconnection line in the second direction is substantially coplanar with a lower portion of a corresponding sidewall of the via hole under the at least part of the upper interconnection line.


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