The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Sep. 18, 2024
Applicant:

Ionq, Inc., College Park, MD (US);

Inventors:

Alex Yulaev, Germantown, MD (US);

James Walker Steere, College Park, MD (US);

Kang Tan, College Park, MD (US);

Jeremy Matthew Sage, Acton, MA (US);

Assignee:

IonQ, Inc., College Park, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 54/20 (2026.01); H10P 54/92 (2026.01); H10P 58/00 (2026.01);
U.S. Cl.
CPC ...
H10P 54/20 (2026.01); H10P 54/924 (2026.01); H10P 58/00 (2026.01);
Abstract

Aspects of the present disclosure relate generally to systems and methods for use in the implementation and/or operation of preparing photonic integrated circuits (PICs). Specifically, the method include coupling a dicing tape to a first side of a wafer. The method also includes performing a first laser processing step to form a modified layer by applying at least one laser beam of a wavelength that has transmissivity through the wafer along a first projected dicing line to define a first facet and performing a second laser processing step to form the modified layer by applying the at least one laser beam to the wafer along a second projected dicing line to define a second facet. The method further includes expanding the dicing tape to divide the wafer from the modified layer along at least the first projected dicing line and the second projected dicing line into PIC chips.


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