Diode device with programmable conducting current and array preparation method thereof

Abstract

The present disclosure discloses a diode device with programmable conducting current, which comprises a metal structure, a resistance variable structure and a semiconductor structure. The present disclosure has an ultra-high self-rectification ratio and stable unipolar resistance change characteristics. A state density function of the semiconductor needs to include at least one peak, which is located near the forbidden band, and a Schottky barrier can be formed at its interface to make the device behave as a diode, thus effectively suppressing the interference of bypass leakage current in the array. The resistance variable structure has unidirectional resistance variable ability, and can perform erasing operation in the direction of current conduction, which on the one hand avoids the problem that the erasing operation cannot be performed by reverse voltage, on the other hand avoids applying reverse voltage to the barrier and improves the reliability of self-rectification effect.