The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Dec. 14, 2020
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Myeong Hun Song, Yongin-si, KR;

Sung Geun Bae, Yongin-si, KR;

Jeong Hyun Lee, Yongin-si, KR;

Jong Chan Lee, Yongin-si, KR;

Tae Hee Lee, Yongin-si, KR;

Woong Hee Jeong, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 29/32 (2025.01); H10H 20/813 (2025.01); H10H 20/819 (2025.01); H10H 29/49 (2025.01);
U.S. Cl.
CPC ...
H10H 29/32 (2025.01); H10H 20/813 (2025.01); H10H 29/49 (2025.01); H10H 20/819 (2025.01);
Abstract

A display device includes a light emitting element including a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer; a first contact electrode electrically connected to the first semiconductor layer of the light emitting element; a second contact electrode electrically connected to the second semiconductor layer of the light emitting element; and a third contact electrode disposed between the first contact electrode and the second contact electrode and electrically connected to the third semiconductor layer of the light emitting element, wherein the first semiconductor layer of the light emitting element and the second semiconductor layer of the light emitting element are doped with a first dopant having a first polarity, and the third semiconductor layer of the light emitting element is doped with a second dopant having a second polarity different from the first polarity.


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