The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Mar. 11, 2024
Applicant:

Toyoda Gosei Co., Ltd., Kiyosu, JP;

Inventor:

Koji Okuno, Kiyosu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 29/01 (2025.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/812 (2025.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01); H10H 29/10 (2025.01);
U.S. Cl.
CPC ...
H10H 29/011 (2025.01); H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/8162 (2025.01); H10H 20/8215 (2025.01); H10H 20/825 (2025.01); H10H 29/10 (2025.01);
Abstract

A light emitting element includes: a substrate; an n layer provided over the substrate as defined herein; a first active layer provided over the n layer as defined herein; a middle layer provided over the first active layer as defined herein; a second active layer provided over the middle layer as defined herein; a groove having a depth reaching the middle layer from a side of the second active layer; a first p layer provided over the second active layer as defined herein; and a second p layer provided over the middle layer exposed on a bottom surface of the groove as defined herein, and a non-n layer including a group III nitride semiconductor and containing O or Si and a p-type impurity is provided between the second active layer and the first p layer and between the middle layer and the second p layer.


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