The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Nov. 18, 2024
Longi Green Energy Technology Co., Ltd., Xi'an, CN;
Zhenguo Li, Xi'an, CN;
Hongbo Tong, Xi'an, CN;
Yao Chen, Xi'an, CN;
Xueliang Zhao, Xi'an, CN;
Jiawei Zhao, Xi'an, CN;
LONGi Green Energy Technology Co., Ltd., Xi'an, CN;
Abstract
This present disclosure provides a back contact solar cell and a photovoltaic module. In one example, a back contact solar cell includes a silicon substrate, a P-type doped polysilicon layer, and an N-type doped polysilicon layer, where the silicon substrate includes a first side and a second side opposite to the first side. The P-type doped polysilicon layer is located in a first region on the first side of the silicon substrate, and the N-type doped polysilicon layer is located in a second region on the first side of the silicon substrate, where the first region is different from the second region. A ratio of a thickness of the P-type doped polysilicon layer to a thickness of the N-type doped polysilicon layer ranges from 1 to 2.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile