The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Dec. 22, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Naoyuki Kawabata, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
An object is to provide a technique that enhances the reliability of a silicon carbide semiconductor device without impairing the productivity of the silicon carbide semiconductor device. In a semiconductor structure, an active region and a terminal region connected to the active region along the outer periphery of the active region are defined, a silicon carbide substrate includes a high resistance region provided in the termination region, or provided in the termination region and a portion of the active region that is in contact with the termination region, and in contact with the buffer layer, and resistance of the high resistance region is higher than resistance of a remaining region of the silicon carbide substrate other than the high resistance region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile