The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Sep. 30, 2022
Hitachi Energy Ltd, Zürich, CH;
Gianpaolo Romano, Baden, CH;
Giovanni Alfieri, Möriken, CH;
Andrei Mihaila, Rieden, CH;
Yulieth Cristina Arango, Zürich, CH;
HITACHI ENERGY LTD, Zurich, CH;
Abstract
A semiconductor device comprises a semiconductor body, a gate electrode and a first electrode, wherein—the semiconductor body comprises a first region which is a source region or an emitter region, and comprises a well region located next to the first region, the first region is of a first conductivity type and the well region is of a second conductivity type, the well region is separated from the gate electrode by a gate insulator layer, the first region is electrically contacted by means of the first electrode, in the first region there is at least one current limiting region, and the at least one current limiting region is a sub-region of the first region with a decreased electrical conductivity.