The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Oct. 27, 2020
Applicant:
Psiquantum, Corp., Palo Alto, CA (US);
Inventor:
Gary Gibson, Palo Alto, CA (US);
Assignee:
Psiquantum, Corp., Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 48/34 (2025.01); H10D 62/10 (2025.01); H10W 40/30 (2026.01); H10D 10/00 (2025.01);
U.S. Cl.
CPC ...
H10D 48/341 (2025.01); H10D 62/106 (2025.01); H10W 40/305 (2026.01); H10D 10/231 (2025.01);
Abstract
A diode includes a first contact comprising a cathode. The diode also includes a field ionized, doped semiconductor region electrically coupled to the first contact. The diode further includes a second contact comprising an anode. The second contact is electrically coupled to the field ionized, doped semiconductor region. The first contact can be a first ohmic contact region electrically coupled to a first portion of the field ionized, doped semiconductor region and the second contact can be a second ohmic contact region electrically coupled to a second portion of the field ionized, doped semiconductor region.