Three-dimensional (3d) trenched metal-oxide-semiconductor field-effect transistor (mosfet) device including first doped wells and second doped wells and method for fabricating the same

Abstract

A 3D trenched MOSFET device includes a semiconductor substrate, an epitaxial layer, an epitaxial layer, a doped area, first doped wells, second doped wells, a trenched gate, first heavily-doped areas, a patterned insulation layer, and a conduction layer. The epitaxial layer is formed on the semiconductor substrate. The doped area, the first doped wells, and the second doped wells are formed in the epitaxial layer. The trenched gate, formed in the epitaxial layer and the first doped wells, penetrates through the doped area and surrounds the second doped wells. The bottoms of the first doped wells and the second doped wells are lower than the bottom of the trenched gate. The first heavily-doped areas are formed in the doped area. The first heavily-doped areas respectively surround the second doped wells and the trenched gate surrounds the first heavily-doped areas.