The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Feb. 02, 2024
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventor:
Hye Won Du, Chungcheongbuk-do, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/01 (2025.01); H10D 62/17 (2025.01); H10P 30/20 (2026.01); H10P 30/22 (2026.01);
U.S. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/0281 (2025.01); H10D 62/314 (2025.01); H10P 30/204 (2026.01); H10P 30/212 (2026.01); H10P 30/22 (2026.01);
Abstract
A high-voltage semiconductor device which has a substrate, a gate field plate, a gate region, and a drift region and a method of manufacturing the high-voltage semiconductor device are described. The drift region has a first impurity region and a second impurity region covering at least one side wall of the first impurity region. The high-voltage semiconductor device is capable of alleviating electric field concentration at an edge of a gate field plate and of preventing deterioration of characteristics of specific on-resistance (Rsp) by having a second impurity region in the drift region covering the first impurity region.