The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Mar. 16, 2022
Dynax Semiconductor, Inc., Kunshan, CN;
Hui Zhang, Kunshan, CN;
Shiqiang Li, Kunshan, CN;
DYNAX SEMICONDUCTOR, INC., Kunshan, CN;
Abstract
Embodiments of the present disclosure relate to an epitaxial structure of a semiconductor device and a manufacturing method thereof, and a semiconductor device. The epitaxial structure of the semiconductor device includes a substrate, and an epitaxial layer located on one side of the substrate, the epitaxial layer including at least a first sub-epitaxial layer group, the first sub-epitaxial layer group including a first sub-epitaxial layer and a second sub-epitaxial layer arranged in stack, wherein a surface of one side of the first sub-epitaxial layer away from the substrate includes a plurality of first dislocation pits, and sidewalls of the first dislocation pits intersect both a plane where the first sub-epitaxial layer is located and a first direction, and the second sub-epitaxial layer covers at least the sidewalls of the first dislocation pits.