The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jul. 27, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Chul Young Kim, Icheon-si, KR;
Jin Ho Bin, Icheon-si, KR;
Hyun Sub Kim, Icheon-si, KR;
Young Tae Yoo, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 16/04 (2006.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0483 (2013.01); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract
There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a source structure; and a stack structure over the source structure, the stack structure including a plug and a slit, wherein the slit includes a source contact being connected to the source structure.
Kim, Chul. (2026). Memory device with reduced resistance (U.S. Patent No. 12751007). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12751007
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile