The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Sep. 19, 2023
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Yousung Lee, Gyeonggi-do, KR;

Dongil Yang, Gyeonggi-do, KR;

Yohan Moon, Gyeonggi-do, KR;

Hyoseok Na, Gyeonggi-do, KR;

Taeyoung Kim, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/12 (2006.01); H03F 1/30 (2006.01); H03F 1/52 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/52 (2013.01); H03F 1/30 (2013.01); H03F 3/245 (2013.01); H03F 2200/451 (2013.01);
Abstract

According to an embodiment, a Radio Frequency (RF) circuit comprises: a power amplifier; a switching circuit configured to electrically connect the power amplifier to a first switch in case that an output voltage of the power amplifier does not exceed a threshold voltage and to electrically connect the power amplifier to a terminating resistor in case that the output voltage of the power amplifier exceeds the threshold voltage; a first electrical path formed between the power amplifier and the switching circuit; and a first diode connected to a second electrical path formed from a first point of the first electrical path to the switching circuit, the first diode connected between the first point and the switching circuit.


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