The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Aug. 22, 2024
Hefei Core Storage Electronic Limited, Anhui, CN;
Jian Hu, Anhui, CN;
Wan-Jun Hong, Anhui, CN;
Tsung-Lin Wu, Hsinchu City, TW;
Qi-Ao Zhu, Anhui, CN;
Chong Peng, Anhui, CN;
Hefei Core Storage Electronic Limited, Anhui, CN;
Abstract
Voltage adjustment method, which may be implemented by a memory storage device and a memory control circuit unit, includes: reading a first physical unit among the physical units based on a first read voltage to obtain a first count value, wherein the first count value reflects a total number of memory cells each having a threshold voltage lower than the first read voltage; obtaining a second count value based on a difference between the first count value and a first default value; bringing the second count value into a target formula to obtain a voltage adjustment parameter; adjusting the first read voltage to a second read voltage according to the voltage adjustment parameter; and reading the first physical unit based on the second read voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile