Memory device and method of operating the memory device

Abstract

Provided herein is a memory device related to precharging a bit line and a method of operating the memory device. The memory device including a plurality of memory cells each connected to any one of a plurality of word lines, the any one of the plurality of word lines being a selected word line, and programmed to any one of a plurality of program states, a row decoder configured to apply a program voltage or a verify voltage to the selected word line, and a plurality of page buffers connected to the plurality of memory cells through a plurality of bit lines and configured to store precharge data used to determine a precharge voltage of a target bit line connected to a verify target memory cell among the plurality of bit lines while the program voltage is applied to the selected word line.