The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Aug. 30, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Akira Katayama, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract

A memory device includes a first conductor, a first stacked body on the first conductor, a second conductor on the first stacked body, a second stacked body on the second conductor, and a third conductor on the second stacked body. The first stacked body includes a first ferromagnetic layer, a first insulating layer, a second ferromagnetic layer, a non-magnetic first metal layer, and a third ferromagnetic layer stacked in order from a side of the first conductor. The second and third ferromagnetic layers have magnetizations in opposite directions. The second stacked body includes a fourth ferromagnetic layer, a second insulating layer, a fifth ferromagnetic layer, a non-magnetic second metal layer, and a sixth ferromagnetic layer stacked in order from a side of the second conductor. The fifth and sixth ferromagnetic layers have magnetizations in opposite directions. The sixth ferromagnetic layer has a larger volume than the third ferromagnetic layer.


Find Patent Forward Citations

Katayama, Akira. (2026). Multilevel antiferromagnetic memory device (U.S. Patent No. 12749519). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12749519

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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