Monolithic integrated quantum memory device array with multi-layer superconducting stack

Abstract

The technology described herein is directed towards a quantum memory device comprising an array of independently addressable quantum memory cells for writing, storing and reading quantum bits (qubits) of information, based on variable coupling between tunable interface resonators and quantum storage cavities. Tuning the resonators of one quantum memory cell to the same frequency facilitates the energy exchange of qubit information, thereby transferring quantum information to or from the quantum storage cavity for a write operation or a read operation, respectively; detuning stores the quantum information in the quantum storage cavity by preventing transfer. One implementation uses rf-SQUIDs for tuning the tunable interface resonator. This facilitates fast frequency adjustments to tune and detune the tunable resonator, enabling the quantum state read/write operations. Different length resonator inductors for the quantum storage cavities in an array result in different resonance frequencies. The quantum storage cavities also can have tunable resonators.