Interleaving foggy-fine programming in memory devices

Abstract

This application is directed to managing memory write operations in a memory system. The memory system includes a controller and non-volatile memory storing data, and the non-volatile memory further includes a first memory block and a second memory block. The memory system successively performs a first batch of foggy programming operations on a plurality of first memory pages located at an end of the first memory block, and opens the second memory block having a plurality of second memory pages located at a start of the second memory block. After the first batch of foggy programming operations, the memory system alternatingly performs a first batch of fine programming operations on the plurality of first memory pages and a second batch of foggy programming operations on the plurality of second memory pages.