The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Feb. 23, 2024
Hewlett Packard Enterprise Development Lp, Spring, TX (US);
Bassem Tossoun, Santa Barbara, CA (US);
Geza Kurczveil, Santa Barbara, CA (US);
Di Liang, Spring, TX (US);
Stanley Cheung, Milpitas, CA (US);
Hewlett Packard Enterprise Development LP, Spring, TX (US);
Abstract
Systems and methods are provided for optical devices having a field-effect transistor (FET) for optical tuning. Examples include a device layer formed on a substrate and comprising a first material, and a FET formed on the substrate. The MOSFET comprises a drain formed in the device layer comprising a first doped region, a source formed in the device layer comprising a second doped region, a gate comprising a second material formed on the device layer, and a conductive channel formed in the device layer based on a voltage bias applied to the gate. An optical waveguide is formed between the gate and the conductive channel.