The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Jun. 23, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Rahul Sharangpani, Fremont, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Kartik Sondhi, Milpitas, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/42 (2026.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10W 20/20 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/425 (2026.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10W 20/20 (2026.01);
Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, and memory opening fill structures located within the memory openings. Each of the memory opening fill structures includes a respective vertical semiconductor channel and a respective vertical stack of memory elements. Each of the electrically conductive layers include a molybdenum layer and a plurality of conductive capping material portions in contact with an outer sidewall of a respective one of the memory opening fill structures.


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