The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Jul. 03, 2023
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Jae Taek Kim, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H10B 41/10 (2023.01); H10B 43/10 (2023.01); H10W 20/42 (2026.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10W 20/42 (2026.01); H10B 41/10 (2023.02); H10B 43/10 (2023.02); H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract
A semiconductor device includes a stack disposed over a peripheral circuit. The stack includes alternately stacked insulating layers and sacrificial layers. The semiconductor device also includes a first contact structure penetrating through the stack to connect with the peripheral circuit. The first contact structure includes a protruding part extending outward from a sidewall of the first contact structure. The semiconductor device further includes a second contact structure disposed on the first contact structure. The second contact structure is connected to the protruding part of the first contact structure.