The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Dec. 28, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Jun Fang, Xi'an, CN;
Ludovico Megalini, Santa Clara, CA (US);
Yi Zheng, Sunnyvale, CA (US);
Jang Seok Oh, Santa Clara, CA (US);
Feng Shou Wang, Xi'an city, CN;
Abstract
A method for forming an implant hard mask on a substrate provides a multi-layer hardmask resistant to high processing temperatures and ion energies. In some embodiments, the method may comprise depositing a screen layer of oxide material with a thickness of approximately 20 nm to approximately 100 nm, depositing a first layer of the implant hard mask of amorphous carbon with a second thickness of approximately 100 nm to approximately 3000 nm; depositing a second layer of the implant hard mask of oxide with a third thickness of approximately 100 nm to approximately 3000 nm; depositing a photoresist layer on the second layer of the implant hard mask, and patterning the photoresist layer to expose portions of the second layer of the implant hard mask, etching the second layer of the implant hard mask and then the first layer of the implant hard mask using a hard mask etch process to expose portions of the screen layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile