The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Apr. 14, 2021
Applicant:

Hansol Chemical Co., Ltd., Seoul, KR;

Inventors:

Hyun-Kyung Lee, Jeollabuk-do, KR;

Jang-Hyeon Seok, Sejong-si, KR;

Jung-Woo Park, Seoul, KR;

Jin-Seong Park, Gyeonggi-do, KR;

Tae Hyun Hong, Seoul, KR;

Jiazhen Sheng, Seoul, KR;

Minjung Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 14/24 (2026.01); H10D 30/67 (2025.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10P 14/24 (2026.01); H10D 30/6755 (2025.01); H10P 14/3434 (2026.01); H10P 14/38 (2026.01);
Abstract

A method for manufacturing a semiconductor layer is provided. The method for manufacturing a semiconductor layer may include preparing a substrate, and conducting a first unit process of reacting a first precursor including indium (In) and a first reaction source and a second unit process of reacting a second precursor including gallium (Ga) and a second reaction source to form a semiconductor layer including the indium and the gallium on the substrate.


Find Patent Forward Citations

Lee, Hyun-Kyung. (2026). Semiconductor layer, method for manufacturing same, and transistor comprising same (U.S. Patent No. 12745575). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12745575

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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