The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Dec. 20, 2023
Applicant:

Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Benoit Bertrand, Grenoble Cedex, FR;

Thomas Bedecarrats, Grenoble Cedex, FR;

Heimanu Niebojewski, Grenoble Cedex, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/14 (2025.01); H10F 71/00 (2025.01); H10F 77/122 (2025.01); H10F 77/20 (2025.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10F 77/1433 (2025.01); H10F 71/00 (2025.01); H10F 77/122 (2025.01); H10F 77/206 (2025.01); H10W 90/00 (2026.01);
Abstract

A quantum device configured to be able to form an array of quantum dots, the device including for this: an active layer made of a semiconductor material; a plurality of first gates disposed along a plurality of rows; a plurality of second gates disposed along a plurality of columns perpendicular to the rows of the plurality of rows; a plurality of third gates, each third gate of the plurality of third gates being disposed at the intersection of one row of the plurality of rows and one column of the plurality of columns, each third gate being separated from the nearest third gates, on a row by a first gate and on a column by a second gate; a plurality of fourth gates, each fourth gate being disposed between two second gates along the rows and between two first gates along the columns.


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