The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Mar. 11, 2024
Azur Space Solar Power Gmbh, Heilbronn, DE;
AZUR SPACE Solar Power GmbH, Heilbronn, DE;
Abstract
A method for stripping a III-V semiconductor layer epitaxially grown on a semiconductor wafer, and the semiconductor wafer is designed as a substrate and has an upper side, a buffer layer and the semiconductor layer being formed on the upper side, and a carrier layer being formed above the semiconductor layer, and the sacrificial layer having a higher wet chemical etching rate compared to the semiconductor layer, the semiconductor layer being introduced into a receiving device in a process step, and position data of points arranged on the upper side being read out from a memory device in a process step, and a laser approaching the points based on the position data in a process step, and holes having a base being produced through the carrier layer and the layer formed beneath the carrier layer via the laser, the base of the hole being formed within the buffer layer.