The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Jul. 27, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jinbum Kim, Suwon-si, KR;
Gyeom Kim, Suwon-si, KR;
Youngkwang Kim, Suwon-si, KR;
Chanyoung Kim, Suwon-si, KR;
Jangwoo Park, Suwon-si, KR;
Sangmoon Lee, Suwon-si, KR;
Sujin Jung, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate including a p-type metal-oxide-semiconductor (MOS) field-effect transistor (FET) (PMOSFET) region and an n-type MOSFET (NMOSFET) region, a first active pattern on the PMOSFET region, a second active pattern on the NMOSFET region, a first channel pattern and a first source/drain pattern on the first active pattern, the first channel pattern connected to the first source/drain pattern, a second channel pattern and a second source/drain pattern provided on the second active pattern, the second channel pattern connected to the second source/drain pattern, and a gate electrode on the first channel pattern and the second channel pattern.