The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
May. 16, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Taeyong Kwon, Suwon-si, KR;
Yoonjoong Kim, Suwon-si, KR;
Seungmin Kim, Suwon-si, KR;
Dogeon Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device may include a plurality of first channel structures on a substrate, a plurality of second channel structures on the substrate, a first impurity region structure between the first channel structures, a second impurity region structure between second channel structures, a third impurity region structure between the first and second channel structures, and a plurality of gate structures disposed between the first to third impurity region structures, respectively. Each of the first channel structure may have a first width, and each of the second channel structure may have a second width less than the first width. The first impurity region structure may have a first volume, and the second impurity region structure may have a second volume smaller than the first volume. The third impurity region structure may have a third volume smaller than the first volume and greater than the second volume.