The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Nov. 10, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou City, CN;
Qiyue Zhao, Suzhou City, CN;
Yu Shi, Suzhou City, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou City, CN;
Abstract
A semiconductor device includes a first and a second nitride-based semiconductor layers, a first and a second electrodes, a first gate electrode, a first and a second field plates. The first field plate is disposed over the second nitride-based semiconductor layer and extends from a region between the first electrode and the first gate electrode to a region directly over the first gate electrode. The second field plate is disposed over the second nitride-based semiconductor layer and extends from a region between the first electrode and the first field plate to a region directly over the first field plate. The second field plate is horizontally spaced away from the first gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile