The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Mar. 28, 2023
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Yotaro Goto, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01);
U.S. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/0285 (2025.01);
Abstract
In a semiconductor substrate, an n-type source region, an n-type drain region, a first p-type semiconductor region, and a second p-type semiconductor region surrounding the n-type source region and the first p-type semiconductor region are formed. A gate electrode is formed on the semiconductor substrate between the n-type source region and the n-type drain region via a dielectric film GF. In the semiconductor substrate, a recessed portion is formed so as to penetrate through the n-type source region, and the first p-type semiconductor region is formed under the recessed portion.