The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Aug. 22, 2023
Macronix International Co., Ltd., Hsinchu, TW;
Chih-Kai Yang, Kaohsiung, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a substrate, a bottom source structure, gate layers, dielectric layers, a contact structure and a plurality of support pillar structures. The bottom source structure is located over the substrate. The bottom source structure includes a bottom electrode layer, a dielectric stack structure and a blocking structure. The gate layers and the dielectric layers are alternately stacked over the bottom source structure. The contact structure penetrates through the gate layers and the dielectric layers and extends to the bottom source structure. The support pillar structure penetrates through the gate layers and the dielectric layers and extends to the bottom source structure. The dielectric stack structure of the bottom source structure surrounds each of the support pillar structures. The blocking structure of the bottom source structure is located between one of the support pillar structures and the contact structure.